Part Number :
SIA906EDJ-T1-GE3
Manufacturer :
Vishay / Siliconix
Description :
SIA906EDJ-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
Lifecycle :
New from this manufacturer
Delivery :
DHL、UPS、FedEx、Registered Mail
Payment :
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More Information :
SIA906EDJ-T1-GE3 More Information
ECAD :
Request Free CAD Models
Pricing(USD) :
$0.63
Remark :
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount :
Surface Mount
Height :
750 µm
Weight :
28.009329 mg
Rise Time :
12 ns
Resistance :
46 mΩ
Case/Package :
TSSOP
Contact Plating :
Tin
Power Dissipation :
1.9 W
Number of Elements :
2
Turn-Off Delay Time :
15 ns
Max Power Dissipation :
7.8 W
Min Operating Temperature :
-55 °C
Gate to Source Voltage (Vgs) :
12 V
Max Junction Temperature (Tj) :
150 °C
Manufacturer Package Identifier :
C-07431-DUAL
Products Category :
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty :
8580 In Stock
Applications :
Wireless infrastructure
Hybrid, electric & powertrain systems
Width :
2.05 mm
Length :
2.05 mm
Fall Time :
12 ns
Rds On Max :
46 mΩ
Schedule B :
8541290080
Number of Pins :
6
Input Capacitance :
350 pF
Number of Channels :
2
Turn-On Delay Time :
5 ns
Element Configuration :
Dual
Max Operating Temperature :
150 °C
Drain to Source Resistance :
37 mΩ
Continuous Drain Current (ID) :
4.5 A
Drain to Source Voltage (Vdss) :
20 V
Drain to Source Breakdown Voltage :
20 V
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